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| Datasheet File OCR Text: |
| April 1995 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. _______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID PD TJ,TSTG TL Parameter Drain-Source Voltage T A = 25C unless otherwise noted BS170 60 60 20 500 1200 830 6.6 -55 to 150 300 MMBF170 Units V V V Drain-Gate Voltage (RGS < 1M) Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 500 800 300 2.4 mA mW mW/C C C THERMAL CHARACTERISTICS RJA Thermal Resistacne, Junction-to-Ambient 150 417 C/W (c) 1997 Fairchild Semiconductor Corporation BS170 Rev. C / MMBF170 Rev. D Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF VGS(th) RDS(ON) gFS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward VGS = 0 V, ID = 100 A VDS = 25 V, VGS = 0 V VGS = 15 V, VDS = 0 V VDS = VGS, ID = 1 mA VGS = 10 V, ID = 200 mA VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA DYNAMIC CHARACTERISTICS Ciss Coss Crss ton Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz All All All 24 17 7 40 30 10 pF pF pF All All All 60 0.5 10 V A nA ON CHARACTERISTICS (Note 1) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance All All BS170 MMBF170 0.8 2.1 1.2 320 320 3 5 V mS SWITCHING CHARACTERISTICS (Note 1) Turn-On Time VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 toff Turn-Off Time VDD = 25 V, ID = 200 m A, VGS = 10 V, RGEN = 25 VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. BS170 MMBF170 BS170 MMBF170 10 10 10 10 ns ns BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics BS170 / MMBF170 2 3 VGS = 10V , DRAIN-SOURCE CURRENT (A) 1.5 9.0 8.0 DRAIN-SOURCE ON-RESISTANCE V GS =4.0V 4.5 5.0 6 .0 7.0 6.0 1 RDS(on) , NORMALIZED 2.5 2 7.0 1.5 5.0 0.5 8.0 9.0 10 4.0 3.0 0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5 1 I 0 D 0.5 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 2 3 V G S = 10V DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 1.75 V GS = 10V 2.5 ID = 500mA R DS(on) , NORMALIZED R DS(ON) , NORMALIZED 1.5 2 TJ = 125C 1.25 1.5 25C 1 1 -55C 0.5 0.75 0.5 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 0 0 0.4 0.8 1.2 I D , DRAIN CURRENT (A) 1.6 2 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. 2 GATE-SOURCE THRESHOLD VOLTAGE 1.1 VDS = 10V 1.6 ID , DRAIN CURRENT (A) T J = -55C 25C 125C Vth , NORMALIZED 1.05 V DS = VGS I D = 1 mA 1 1.2 0.95 0.8 0.9 0.4 0.85 0 0 2 V GS 4 6 8 , GATE TO SOURCE VOLTAGE (V) 10 0.8 -50 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with Temperature. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) BS170 / MMBF170 1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE 2 ID = 100A 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 IS , REVERSE DRAIN CURRENT (A) 1 0.5 V GS = 0V , NORMALIZED TJ = 125C 0.1 0.05 25C -55C BV DSS 0.01 0.005 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C) 125 150 0.001 0.2 0.4 V SD 0.6 0.8 1 1.2 1.4 , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature. 60 40 V GS , GATE-SOURCE VOLTAGE (V) 10 C iss 20 CAPACITANCE (pF) ID = 5 0 0 m A 8 V DS = 25V C oss 10 6 5 C rss f = 1 MHz V GS = 0V 1 2 V DS 3 5 10 20 30 50 4 2 2 1 , DRAIN TO SOURCE VOLTAGE (V) 0 0 0.4 0.8 1.2 1.6 2 Q g , GATE CHARGE (nC) Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. VDD t d(on) t on tr 90% t off t d(off) 90% tf V IN D RL V OUT DUT Output, Vout VGS 10% 10% 90% R GEN Inverted G Input, Vin S 10% 50% 50% Pulse Width Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. BS170 Rev. C / MMBF170 Rev. D Typical Electrical Characteristics (continued) 3 2 1 Lim it 10 ( DS ) ON 3 2 0u s I D , DRAIN CURRENT (A) 10 1 0.5 RD S( O Lim N) it 0u s ID , DRAIN CURRENT (A) 0.5 1m 10 ms 10 0m s 1s 10 s DC R s 1m 10 s ms 0.1 0.05 0.1 0.05 10 0m s V GS = 10V SINGLE PULSE 0.01 0.005 1 2 V GS = 10V SINGLE PULSE 0.01 0.005 1 T A = 25C 1s 10 s DC T A = 25C 2 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V) 60 80 Figure 13. BS170 Maximum Safe Operating Area. Figure 14. MMBF170 Maximum Safe Operating Area. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 0.2 0.1 0.05 0.2 0.1 P(pk) 0.05 R R JA (t) = r(t) * R JA JA = (See Datasheet) t1 0.02 0.01 t2 0.02 0.01 0.0001 Single Pulse TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 15. TO-92, BS170 Transient Thermal Response Curve. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) R JA (t) = r(t) * R JA R JA = (See Datasheet) 0.01 Single Pulse t1 t2 0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2 100 300 Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve. BS170 Rev. C / MMBF170 Rev. D |
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